PMN42XPEA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

PMN42XPEA
20 V, P-channel Trench MOSFET
21 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Fast switching
• Trench MOSFET technology
• 2 kV ESD protection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = -4.5 V; I_D = -3 A; T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-12 -
12
V
[1]
-
-
-5.7 A
-
41
46
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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