PMN42XPEA_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
Symbol
Parameter
Conditions
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
ESD maximum rating
V_ESD
electrostatic discharge voltage HBM
Min Max Unit
-55 150 °C
-55 150 °C
-65 150 °C
[1]
-
-1.4 A
[3]
-
2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
120
017aaa123
120
017aaa124
P_der
I_der
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMN42XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 15