PMN42XPEA_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN42XPEA
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
7. Marking
Table 4. Marking codes
Type number
PMN42XPEA
Marking code
B9
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = -4.5 V; T_amb = 25 °C
V_GS = -4.5 V; T_amb = 100 °C
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
PMN42XPEA
Product data sheet
T_sp = 25 °C
All information provided in this document is subject to legal disclaimers.
21 March 2014
Min Max Unit
-
-20 V
-12 12
V
[1]
-
-5.7 A
[1]
-
-4
A
[1]
-
-2.9 A
-
-16 A
[2]
-
500 mW
[1]
-
1310 mW
-
8330 mW
© NXP Semiconductors N.V. 2014. All rights reserved
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