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PMN42XPEA_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET
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NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tamb = 150 °C
IGSS
gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 150 °C
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
gfs
forward
VDS = -10 V; ID = -4 A; Tj = 25 °C
transconductance
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -10 V; ID = -4 A; VGS = -4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -10 V; ID = -4 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 -
-
V
-0.75 -1
-1.25 V
-
-
-1
µA
-
-
-10 µA
-
-
10
µA
-
-
-10 µA
-
41
46
mΩ
-
56
64
mΩ
-
56
64
mΩ
-
12.5 -
S
-
11.5 17.3 nC
-
2.7 -
nC
-
2.4 -
nC
-
1410 -
pF
-
207 -
pF
-
148 -
pF
-
17
-
ns
-
27
-
ns
-
33
-
ns
-
27
-
ns
-
-0.7 -1.2 V
PMN42XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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