BUK768R1-40E_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
14 V
003aah177
4
V_DS= 32V
2
0
0
5
10
15
20
25
Q_G (nC)
10⁴
C
(pF)
10³
10²
10^-1
1
003aah178
C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 14. Transient thermal impedance from junction to
mounting base as a function of pulse duration
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
200
I_S
(A)
150
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100
T_j = 175°C
T_j = 25 °C
50
0
0
0.5
1
1.5
V_SD(V)
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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