 English |
|
|
|
|
|
|
|
| BUK768R1-40E_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
LD
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 20 A; Tj = 175 °C;
see Figure 12; see Figure 11
ID = 20 A; VDS = 32 V; VGS = 10 V;
see Figure 13; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 1.5 â¦; VGS = 10 V;
RG(ext) = 5 â¦
from upper edge of drain mounting
base to center of die
from source lead to source bonding
pad
IS = 20 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
40 -
-
V
36 -
-
V
2.4 3
4
V
-
-
4.5 V
1
-
-
V
-
0.05 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
5.6 7.2 mâ¦
-
-
13.7 mâ¦
-
24
-
nC
-
5.6 -
nC
-
7.4 -
nC
-
1300 1730 pF
-
260 312 pF
-
144 197 pF
-
11
-
ns
-
9
-
ns
-
21
-
ns
-
9
-
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.86 1.2 V
-
18.6 -
ns
-
10.7 -
nC
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 â 10 July 2012
© NXP B.V. 2012. All rights reserved.
6 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese