BUK768R1-40E_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
003aah169
160
I_D
V_GS(V) = 20
10
7
(A)
120
6
80
5.5
20
R_DSon
(mΩ)
15
10
003aah170
40
0
0
1
T_j = 25 °C; t_p = 300 μs
5
4.5
4
V_DS(V)
2
5
0
0
5
10
15 _VGS(V) 20
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
180
I_D
(A)
120
003aah172
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
T_j = 175 °C
10^-4
60
T_j = 25 °C
10^-5
0
0
2
4
6 _VGS(V) 8
10^-6
0
2
4
6
V_GS (V)
Fig 8. Transfer characteristics; drain current as a
Fig 9. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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