 English |
|
|
|
|
|
|
|
| BUK768R1-40E_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
10
1
10-1
10-3
10-2
10-1
003aah166
(1)
(2)
(3)
1 tAL(ms) 10
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS/ ID
DC
003aah167
tp =10 μ s
100 μ s
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 â 10 July 2012
© NXP B.V. 2012. All rights reserved.
4 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese