BUK768R1-40E_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
6. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 5
minimum footprint; mounted on a
printed-circuit board
Min Typ Max Unit
-
-
1.56 K/W
-
50
-
K/W
10
Z_th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10^{-1 0.05}
0.02
single shot
10^-2
003aah168
P
δ = ^tp
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
t_p
t
T
10^-1
t_p (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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