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| BUK768R1-40E_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
003aah027
max
typ
min
20
RDSon
(mΩ)
5
5.5
6
15
003aah175
7
10
10
5
VGS(V) = 20
0
-60
0
60
120
180
Tj (°C)
0
0
40
80
Tj = 25 °C; tp = 300 μs
120 ID(A) 160
Fig 10. Gate-source threshold voltage as a function of Fig 11. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2
a
1.5
003aag816
1
0.5
0
-60
0
60
120
180
Tj (°C)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate charge waveform definitions
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 â 10 July 2012
© NXP B.V. 2012. All rights reserved.
8 of 14
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