BUK768R1-40E_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_j = 25 °C
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 4
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped;
see Figure 3
Min
-
-
-20
[1] _-
[1] _-
-
-
-55
-55
[1] _-
-
[2][3] _-
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
Max Unit
40 V
40 V
20 V
75 A
59 A
335 A
96 W
175 °C
175 °C
75 A
335 A
43.8 mJ
100
I_D
(A)
75
(1)
50
25
003aah165
120
P_der
(%)
80
40
03aa16
0
0
50
100
150 _Tmb(°C) 200
(1) Capped at 75A due to package
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
3 of 14