BUK768R1-40E_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK768R1-40E
N-channel TrenchMOS standard level FET
Rev. 1.1 — 10 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Repetitive avalanche rated
 Suitable for thermally demanding
environments due to 175 °C rating
 True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
 12 V Automotive systems
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage
I_D
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
-
-
40 V
[1] _-
-
75 A
P_tot
total power dissipation
Static characteristics
T_mb = 25 °C; see Figure 2
-
-
96 W
R_DSon
drain-source on-state resistance V_GS = 10 V; I_D = 20 A; T_j = 25 °C;
-
see Figure 11
5.6 7.2 mΩ
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 20 A;
V_DS = 32 V; see Figure 13;
see Figure 14
-
7.4 -
nC
[1] Continuous current is limited by package.