BUK664R4-55C_15 Datasheet, PDF (9/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
3
VGS (th)
(V)
2
1
max
typ
min
003aac337
0
-6 0
0
60
120
180
Tj (°C)
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 11. Gate-source threshold voltage as a function of Fig 12. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
40
R_DSon
(mΩ)
30
3.0 3.2
003aaf017
3.4 V_GS(V) = 3.5
3.6
16
R_DSon
(mΩ)
12
V_GS (V) = 3.8
003aae855
4.0
4.5
20
8
3.8
4.0
10
4.5
4
10.0
5.0
6.0
10.0
0
0
20
40
I_D(A) ⁶⁰
0
0
50
100
150
200
I_D (A)
Fig 13. Drain-source on-state resistance as a function Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
of drain current; typical values
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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