BUK664R4-55C_15 Datasheet, PDF (11/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
10⁵
C
(pF)
10⁴
003aae714
C_iss
160
I_S
(A)
120
80
003aae716
10³
C_oss
T_j = 175 °C
T_j = 25 °C
40
C_rss
10²
10^−2
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 19. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
0.4
0.8 _{VSD (V)} 1.2
V_GS = 0 V
Fig 20. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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