BUK664R4-55C_15 Datasheet, PDF (2/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 100 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C
Q_GD
gate-drain charge I_D = 25 A; V_DS = 44 V; V_GS = 10 V;
see Figure 18; see Figure 17
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
263 mJ
-
31.5 -
nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G
gate
mb
D
drain
S
source
D
mounting base; connected to drain
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK664R4-55C
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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