BUK664R4-55C_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Rev. 03 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
55 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
[1] _-
-
100 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
204 W
Static characteristics
R_DSon
drain-source
V_GS = 5 V; I_D = 15 A; T_j = 25 °C;
on-state resistance see Figure 13
-
11.1 13 mΩ
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
-
4.2 4.9 mΩ
see Figure 14