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BUK664R4-55C_15 Datasheet, PDF (5/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
-
0.74 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10â1
0.1
0.05
0.02
10â2
single shot
003aae531
P
tp
δ= T
10â3
10â6
10â5
10â4
10â3
10â2
tp
t
T
10â1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 21 December 2010
© NXP B.V. 2010. All rights reserved.
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