BUK664R4-55C_15 Datasheet, PDF (8/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
160
I_D
(A)
120
003aae854
80
40
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
5
V_GS (V)
20
R_DSon
(mΩ)
15
003aae857
10
5
0
0
5
10
15
20
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aad806
min typ max
4
V_GS(th)
(V)
3
2
1
003aae542
max @1mA
typ @1mA
min @2.5mA
10^-6
0
1
2
3
4
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
Fig 10. Gate-source threshold voltage as a function of
junction temperature
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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