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BUK664R4-55C_15 Datasheet, PDF (6/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
55 -
-
V
27 -
-
V
50 -
-
V
1.8 2.3 2.8 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
0.5 -
-
V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
1.1 1.5 2
V
VGSth
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C;
-
-
3.3 V
see Figure 10
ID = 2.5 mA; VDS = VGS; Tj = 175 °C; 0.8 -
-
V
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
VDS = 30 V; VGS = 0 V; Tj = 175 °C
-
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -15 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state resistance VGS = 5 V; ID = 15 A; Tj = 25 °C;
-
see Figure 13
-
1
µA
-
500 µA
-
500 µA
2
100 nA
2
100 nA
2
100 nA
11.1 13 mΩ
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
-
see Figure 13
11.4 12 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
4.2 4.9 mΩ
see Figure 14
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 14
-
5.2 6.6 mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
-
see Figure 14
5.7 7.7 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C;
-
10
11.7 mΩ
see Figure 13
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
-
10.8 mΩ
see Figure 15; see Figure 14
Dynamic characteristics
QG(tot)
total gate charge
ID = 45 A; VDS = 15 V; VGS = 4.5 V;
-
5.9 -
C
Tj = 25 °C; see Figure 16;
see Figure 17
ID = 25 A; VDS = 44 V; VGS = 5 V;
-
67
-
nC
see Figure 18; see Figure 17
ID = 25 A; VDS = 44 V; VGS = 10 V;
-
124 -
nC
see Figure 17; see Figure 18
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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