BUK664R4-55C_15 Datasheet, PDF (7/16 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Table 6.
Symbol
Q_GS
Q_GD
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_D
Characteristics …continued
Parameter
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
L_S
internal source inductance
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_D = 25 A; V_DS = 44 V; V_GS = 10 V;
see Figure 18; see Figure 17
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
T_j = 25 °C; see Figure 19
V_DS = 45 V; R_L = 1.8 Ω; V_GS = 10 V;
R_G(ext) = 10 Ω
from source lead to source bond
pad ; T_j = 25 °C
from upper edge of drain mounting
base to centre of die ; T_j = 25 °C
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 20
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
19
-
nC
-
31.5 -
nC
-
5800 7750 pF
-
550 660 pF
-
380 520 pF
-
25
-
ns
-
65 -
ns
-
252 -
ns
-
116 -
ns
-
7.5 -
nH
-
3.5 -
nH
-
0.83 1.2 V
-
55
-
ns
-
112 -
nC
160
g_fs
(S)
120
003aae708
80
40
0
0
20
40
T_j = 25°C; V_DS = 25 V
60
80
I_D (A)
Fig 5. Forward transconductance as a function of
drain current; typical values
250
I_D
(A)
200
150
100
50
0
0
V_GS (V) = 10
003aae852
6.0
5.0
4.5
4.0
3.8
3.6
3.4
3.2
0.5
1
1.5
2
V_DS (V)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
BUK664R4-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
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