BUK6213-30A Datasheet, PDF (9/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
50
ID
(A)
40
03nk57
10
VGS
(V)
8
03nk55
VDD = 14 V
VDD = 24 V
30
6
20
4
10
2
Tj = 175 °C
Tj = 25 °C
0
0
1
2
3
4
5
VGS (V)
0
0
10
20
30
40
50
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
100
IS
(A)
75
03nk54
50
25
Tj = 175 °C
Tj = 25 °C
0
0.0
0.4
0.7
1.1
1.4
VSD (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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