BUK6213-30A Datasheet, PDF (4/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-a)
thermal resistance from junction to
ambient
R_th(j-mb) thermal resistance from junction to
mounting base
Conditions
Figure 4
5.1 Transient thermal impedance
BUK6213-30A
TrenchMOS™ Intermediate level FET
Min Typ Max Unit
-
71.4 -
K/W
-
-
1.4 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 ^0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nk63
P
δ
=
tp
T
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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