BUK6213-30A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
4
VGS(th)
(V)
3
2
03nk65
max
typ
10-1
ID (A)
10-2
10-3
10-4
min
typ
03nk66
max
1
min
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
4
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
gfs
(S)
30
03nk56
20
10
0
0
10
20
30
40
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
3000
C
(pF)
2000
1000
03nk61
Ciss
Coss
0
10-1
Crss
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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