BUK6213-30A Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
200
ID
(A) ₁₄
150 ¹²
100
50
0
0
20 ₁₀
9
8
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2
4
03nk59
Label is VGS (V)
6
8
10
VDS (V)
30
RDSon
(mΩ)
25
20
15
10
5
0
03nk58
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
30
03nk60
2
RDSon
label is VGS (V)
a
(mΩ)
5
4.5
1.5
20
4
3.5
10
1
20
10
0.5
03aa27
0
0
50
100
T_j = 25 °C; t_p = 300 µs
150
200
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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