BUK6213-30A Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
BUK6213-30A
-
Plastic single-ended surface mounted package
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
-
-
-
[1] _-
[2] _-
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
[1] _-
-
P_tot
total power dissipation
T_mb = 25 °C; Figure 1
-
T_stg
storage temperature
−55
T_j
junction temperature
−55
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 25 °C
[1] _-
[2] _-
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
-
E_DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 55 A;
-
V_DS ≤ 30 V; V_GS = 10 V;
R_GS = 50 Ω; starting T_j = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by bondwires.
Version
SOT428
Max Unit
30
V
30
V
±20
V
64
A
55
A
45
A
257
A
102
W
+175 °C
+175 °C
64
A
55
A
257
A
267
mJ
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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