BUK6213-30A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

BUK6213-30A
TrenchMOS™ Intermediate level FET
Rev. 02 — 22 September 2003
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s 175 °C rated
s Q101 compliant
s Intermediate level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s E_DS(AL)S ≤ 267 mJ
s I_D ≤ 55 A
s R_DSon = 10 mΩ (typ)
s P_tot ≤ 102 W.
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
1
3
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the package.
Symbol
d
g
MBB076
s