BUK6213-30A Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS Intermediate level FET

Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
120
Pder
(%)
80
40
03na19
80
ID
(A)
60
40
20
03nk64
Capped at 55 A due to bondwires
0
0
50
100
150
200
Tmb _(°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
V_GS ≥ 10 V
100
150
200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
102
Limit RDSon = VDS/ID
Capped at 55 A due to bondwires
10
DC
03nk62
tp = 10 µ s
100 µ s
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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