BUK213-50Y Datasheet, PDF (9/16 Pages) NXP Semiconductors – Single channel high-side TOPFET

Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
30
VBL(TO)
(V)
20
10
03pa40
max
typ
min
0
0
10
20
30
40
50
VBG (V)
V_IG = 5 V; −40 °C ≤ T_j ≤ +150 °C
Fig 11. Battery-load threshold voltage as a function of battery-ground voltage.
8. Dynamic characteristics
Table 7: Switching characteristics
T_mb = 25 °C; V_BG = 13 V; resistive load R_L = 13 Ω. Figure 13
Symbol Parameter
Conditions
Turn-on measured from the input going HIGH
t_d(on)
turn-on delay time
to 10% V_L
dV/dt_on rising slew rate
30 to 70% V_L
t_on
turn-on switching time
to 90% V_L
Turn-off measured from the input going LOW
t_d(off)
dV/dt_off
t_off
turn-off delay time
falling slew rate
turn-off switching time
to 90% V_L
70 to 30% V_L
to 10% V_L
Min Typ Max Unit
-
50
80
µs
-
0.5 1.0 V/µs
-
85
160 µs
-
50
80
µs
-
0.8 1.2 V/µs
-
70
120 µs
Table 8: Status response times
Limits are valid for −40 °C ≤ T_mb ≤ +150 °C and typical values for T_mb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Measured from when the input goes HIGH
t_d(sc)
t_d(lc)
short circuit response time
low current detect response time
V_BL > V_BL(TO); Figure 16
I_L < I_L(LC); Figure 15
-
180 250 µs
-
200 -
µs
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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