BUK213-50Y Datasheet, PDF (10/16 Pages) NXP Semiconductors – Single channel high-side TOPFET

Philips Semiconductors
Table 9: Capacitances
T_mb = 25 °C; f = 1 MHz; V_IG = 0 V.
Symbol Parameter
C_ig
input capacitance
C_bl
output capacitance
C_sg
status capacitance
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
Conditions
V_BG = 13 V
V_BL = 13 V
V_SG = 5 V
Min Typ Max Unit
-
15 20 pF
-
130 185 pF
-
11 15 pF
RI
VBG
P
VIG
RS
VL
LL
RL
VSG
03pa45
Fig 12. Schematic drawing of the switching circuit.
VL
0V
ton
90%
dV/dton
toff
dV/dtoff
10%
5V
VSG
0V
5V
VIG
0
03pa51
V_BG = 13 V; V_IG = 5 V and T_j = 25 °C
Fig 13. Resistive switching waveforms and definitions.
VL 0 V
IL
0V
5V
VSG
0.7 V
0V
5V
VIG
0
IL(LC)
EBL(CL)
03pa50
VL
0V
5V
VSG
0.7 V
0V
5V
VIG
0
ton
90%
td(lc)
toff
10%
03pa48
Fig 14. Switching a large inductive load.
9397 750 09384
Product data
Fig 15. Low current detection waveforms.
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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