BUK213-50Y Datasheet, PDF (5/16 Pages) NXP Semiconductors – Single channel high-side TOPFET

Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
7. Static characteristics
Table 6: Static characteristics
Limits are valid for −40 °C ≤ T_mb ≤ +150 °C and typical values for T_mb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Clamping voltage
V_BG
battery-ground voltage
V_BL
battery-load voltage
V_LG
negative load-ground
V_LG
negative load voltage
Supply voltage
I_G = 1 mA; Figure 6
I_L = I_G = 1 mA
I_L = 10 mA; Figure 12 and 14
I_L = 2 A; t_p = 300 µs
50
55
50
55
−18 −23
[1] _{−20 −25}
V_BG
operating range
Current
battery-ground
5.5 -
I_B
quiescent current
I_L
off-state load current
I_G
operating current
I_L(nom) nominal load current (ISO)
Resistance ^[4]
V_LG = 0 V; Figure 10
T_mb = 150 °C
T_mb = 25 °C
V_BL = V_BG
T_mb = 150 °C
T_mb = 25 °C
Figure 6
V_BL = 0.5 V; T_mb = 85 °C
[2]
-
-
-
0.1
-
-
-
0.1
-
2
[3] _3.6
-
R_BLon
on-state resistance
R_G
internal ground resistance
Input ^[5]
9 ≤ V_BG ≤ 35 V; I_L = 2 A; Figure 5
T_mb = 25 °C
T_mb = 150 °C
V_BG = 6 V; I_L = 2 A
T_mb = 25 °C
T_mb = 150 °C
I_G = 10 mA
-
80
-
-
-
100
-
-
95
150
I_I
input current
V_IG
input clamping voltage
V_IG(ON) input turn-on threshold voltage
V_IG(OFF) input turn-off threshold voltage
∆V_IG
input turn-on threshold hysteresis
I_I(ON)
input turn-on current
I_I(OFF)
input turn-off current
Low current detection ^[6][9]
V_IG = 5 V
I_I = 200 µA
Figure 9
V_IG = 3 V
V_IG = 1.5 V
20
90
5.5 7
-
2.4
1.5 2.1
-
0.3
-
-
10
-
I_L(LC)
low current detection threshold
∆I_L(LC) hysteresis
Undervoltage ^[9]
T_mb = −40 to +150 °C
T_mb = 25 °C; Figure 15
90
-
150 300
-
60
V_BG(UV) low supply threshold voltage
[7] ₂
4.2
Max
65
65
−28
−30
35
20
2
20
1
4
-
100
200
125
250
190
160
8.5
3
-
-
100
-
600
450
-
5.5
Unit
V
V
V
V
V
µA
µA
µA
µA
mA
A
mΩ
mΩ
mΩ
mΩ
Ω
µA
V
V
V
V
µA
µA
mA
mA
mA
V
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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