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BUK213-50Y Datasheet, PDF (4/16 Pages) NXP Semiconductors – Single channel high-side TOPFET
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
5. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VBG
continuous supply voltage
IL
continuous load current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tmb
mounting base temperature
Reverse battery voltage
Tmb ≤ 112 °C
Tmb ≤ 25 °C
during soldering (≤ 10 s)
VBG
continuous reverse voltage
VBG
repetitive reverse voltage
External resistor
RI
external resistor
RS
Input current
II
continuous current
II
repetitive peak current
Status current
δ ≤ 0.1; tp = 300 µs
IS
continuous current
IS
repetitive peak current
Inductive load clamping
δ ≤ 0.1; tp = 300 µs
EBL(CL) non-repetitive clamping energy
Electrostatic discharge
Tj = 150 °C prior to turn-off; IL = 2 A
Vesd
electrostatic discharge voltage
Human body model; C = 100 pF;
R = 1.5 kΩ
Min Max Unit
-
50 V
-
8.5 A
-
48 W
−55 +175 °C
-
150 °C
-
260 °C
[1] -
-
16 V
32 V
[2] 3.3
-
kΩ
[3] 3.3
-
kΩ
−5
+5
mA
−50 +50 mA
−5
+5
mA
−50 +50 mA
-
100 mJ
-
2
kV
[1] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
[2] To limit input current during reverse battery and transient overvoltages.
[3] To limit status current during reverse battery and transient overvoltages.
6. Thermal characteristics
Table 5:
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to
mounting base
thermal resistance from junction to mounted on printed circuit board;
ambient
minimum footprint; SOT426
Min Typ Max Unit
-
2.1 2.6 K/W
-
-
50 K/W
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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