BUK213-50Y Datasheet, PDF (7/16 Pages) NXP Semiconductors – Single channel high-side TOPFET

Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
200
RBLon
(mΩ)
160
03pa54
Tj = 150 °C
120
Tj = 25 °C
80
Tj = −40 °C
40
0
0
10
20
30
40
VBG (V)
I_L = 2 A; V_IG = 5 V
Fig 5. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
4
IG
(mA)
3
undervoltage
shutdown
2
1
Tj = −40 °C
Tj = 25 °C
Tj = 150 °C
overvoltage
shutdown
03pa55
clamping
0
0
25
50
VBG (V)
75
V_IG = 5 V
Fig 6. Supply current characteristics: battery-ground operating current as a function of battery-ground voltage;
typical values.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7 of 16