PSMN6R3-120PS_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
96 V
60 V
V_DS= 24 V
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4
2
0
0
50
100
150
200
250
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
1E+5
C
(pF)
10⁴
10³
10²
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C_iss
C_oss
C_rss
100
I_S
(A)
80
60
40
20
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T_j = 175°C
T_j = 25 °C
10
10^-1
1
10
10²
V_DS(V)
0
0
0.3
0.6
0.9
1.2
V_SD (V)
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of
as a function of drain-source voltage; typical
source-drain (diode forward) voltage; typical
values
values
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
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