PSMN6R3-120PS_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
10^{- 1}
I_D
(A)
10^{- 2}
10^{- 3}
10^{- 4}
10^{- 5}
03aa35
min typ max
0
- 60
0
60
120
180
T_j (°C)
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
25
R_DSon
(mΩ)
20
003aaj848
4.5
3
a
2.4
003aak793
15
1.8
10
V_GS(V) = 5V
1.2
5.5
7
5
10
0.6
0
0
20
40
60
80
100I_{D (A)120}
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
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