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PSMN6R3-120PS_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
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NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
IDSS
drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
internal gate
f = 1 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
Fig. 14; Fig. 15
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
Min Typ Max Unit
120 -
-
V
108 -
-
V
2
3
4
V
1
-
-
V
-
-
4.6 V
-
0.1 1
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
4
5.7 6.7 mΩ
-
16.5 19.4 mΩ
0.44 0.88 1.76 Ω
-
207.1 -
nC
-
43.2 -
nC
-
29.8 -
nC
-
13.4 -
nC
-
61.9 -
nC
-
4.3 -
V
-
11384 -
pF
-
534 -
pF
-
358 -
pF
-
42.1 -
ns
-
58.2 -
ns
© NXP B.V. 2013. All rights reserved
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