PSMN6R3-120PS_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

NXP Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R3-120PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_DGR
drain-gate voltage
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
V_GS = 10 V; T_mb = 100 °C; Fig. 1
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
I_S
PSMN6R3-120PS
source current
T_mb = 25 °C
All information provided in this document is subject to legal disclaimers.
Product data sheet
7 June 2013
Min Max Unit
-
120 V
-
120 V
-20 20
V
-
70
A
-
70
A
-
280 A
-
405 W
-55 175 °C
-55 175 °C
-
260 °C
-
70
A
© NXP B.V. 2013. All rights reserved
2 / 12