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| PSMN6R3-120PS_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220 | |||
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NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
103
ID
(A)
102
Limit RDSon = VDS / ID
tp = 10 us
100 us
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10
DC
1 ms
1
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage
8. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in free air
Min Typ Max Unit
-
0.3 0.37 K/W
-
60
-
K/W
1
Zth(j-mb)
(K/W)
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δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
single shot
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
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