PSMN6R3-120PS_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
7 June 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Improved dynamic avalanche performance
• Suitable for standard level gate drive
• TO-220 package can be mounted to heatsink
3. Applications
• AC-to-DC power supply
• Synchronous rectification
• Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 25 A; V_DS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 70 A;
V_sup ≤ 120 V; unclamped; R_GS = 50 Ω;
Fig. 3
Min Typ Max Unit
-
-
120 V
-
-
70
A
-
-
405 W
4
5.7 6.7 mΩ
-
61.9 -
nC
-
207.1 -
nC
-
-
532 mJ
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