English
Language : 

PSMN6R3-120PS_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
◁
NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
Conditions
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 60 V
Min Typ Max Unit
-
142.1 -
ns
-
67.7 -
ns
-
0.79 1.2 V
-
76.1 -
ns
-
264.2 -
nC
120
ID
6
(A)
10
100
5.5
5
003aaj844
24
RDSon
(mΩ)
20
003aaj843
80
16
VGS(V) =4.5
60
12
40
8
20
4
4
0
0
1
2
3 VDS(V) 4
0
0
4
8
12
16
20
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
250
gfs
(S)
200
003aaj841
100
ID
(A)
80
003aaj842
150
60
100
40
50
20
Tj = 175 °C
Tj = 25 °C
0
0
20
40
60
80
100
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
0
0
2
4
VGS(V) 6
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
6 / 12
 ▷