PSMN6R3-120PS_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
V_GS = 10 V; T_j(init) = 25 °C; I_D = 70 A;
V_sup ≤ 120 V; unclamped; R_GS = 50 Ω;
Fig. 3
80
I_D
(A)
60
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120
P_der
(%)
80
40
40
20
Min Max Unit
-
280 A
-
532 mJ
03aa16
0
0
30
60
90 120 150 180
T_j (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
10²
I_AL
(A)
10
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(1)
(2)
1
10^-3
10^-2
10^-1
1
10
t_AL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
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