PSMN008-75P Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
50
IS ⁴⁵
(A) ₄₀
VGS = 0 V
35
175 ^oC
03ac70
30
25
20
15
10
5
0
0
Tj = 25 ^oC
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD (V)
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
15
VGS ₁₄
( V ) ₁₃
12
ID
Tj
=
=
75 A
25 ^oC
!=?$'
11
10
9
8
VDS = 15 V
7
6
5
VDS = 60 V
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
QG _(nC)
I_D = 75 A; V_DS = 15 V and 60 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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