PSMN008-75P Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
T_j = 25 to 175 °C
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T_j = 25 to 175 °C
T_j = 25 to 175 °C; R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 2 and 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
I_S
source (diode forward) current T_mb = 25 °C
(DC)
I_SM
peak source (diode forward)
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
current
Avalanche ruggedness
E_AS
non-repetitive avalanche energy unclamped inductive load; I_D = 75 A;
t_p = 0.1 ms; V_DD ≤ 15 V;
R_GS = 50 Ω; V_GS = 10 V; starting
T_j = 25 °C; Figure 4
I_AS
non-repetitive avalanche current unclamped inductive load;
V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; Figure 4
Typ
Max
Unit
−
75
V
−
75
A
−
230
W
−
175
°C
7.9
8.5
mΩ
Min
Max
Unit
−
75
V
−
75
V
−
±20
V
−
75
A
−
75
A
−
240
A
−
230
W
−55
+175
°C
−55
+75
°C
−
75
A
−
240
A
−
360
mJ
−
75
A
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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