English
Language : 

PSMN008-75P Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
◁
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 250 µA; VGS = 0 V
75
voltage
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 10
Tj = 25 °C
2
Tj = 175 °C
1
IDSS
drain-source leakage current VGS = 0 V; VDS = 75 V
Tj = 25 °C
−
Tj = 175 °C
−
IGSS
gate-source leakage current VDS = 0 V; VGS = ±20 V
−
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Tj = 25 oC
−
Tj = 175 °C
−
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDS = 60 V;
−
Qgs
gate-source charge
VGS = 10 V; Figure 15
−
Qgd
gate-drain (Miller) charge
−
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
−
Coss
output capacitance
f = 1 MHz; Figure 13
−
Crss
reverse transfer capacitance
−
td(on)
tr
turn-on delay time
turn-off rise time
VDD = 37.5 V; RD = 1.5 Ω;
−
VGS = 10 V; RG = 10 Ω
−
td(off)
turn-off delay time
−
tf
turn-off fall time
−
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
−
voltage
Figure 14
trr
reverse recovery time
IS = 5 A; dIS/dt = −100 A/µs;
−
Qr
recovered charge
VGS = 0 V; VR = 30 V
−
Typ
Max
Unit
90
−
V
3
4
V
−
−
V
0.05
10
µA
−
500
µA
4
100
nA
7.9
8.5
mΩ
−
20
mΩ
115
−
nC
21
−
nC
50
−
nC
4.7
−
nF
760
−
pF
400
−
pF
18
−
ns
80
−
ns
170
−
ns
100
−
ns
0.8
1.2
V
80
−
ns
227
−
nC
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
5 of 14
 ▷