PSMN008-75P Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
100
ID
(A) ₉₀
Tj = 25 ^oC
VGS = 6.0 V
03ac64
80
5.0 V
70
60
50
4.5 V
40
4.3 V
30
20
4.1 V
3.9 V
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
100
ID
(A) ⁹⁰
80
VDS > ID X RDSon
03ac67
70
60
50
Tj = 150 ^oC
40
30
20
Tj = 25 ^oC
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.1
R _{DSon 0.09}
(Ω)
0.08
0.07
3.9 V
4.1 V
4.3 V
03ac66
Tj = 25 ^oC
0.06
4.5 V
0.05
0.04
0.03
VGS = 10 V
0.02
5.0 V
0.01
0
0 10 20 30 40 50 60 70 80 90 100
I _D (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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