PSMN008-75P Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb)
thermal resistance from junction to mounting Figure 5
base
R_th(j-amb)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
SOT404 package; mounted on
printed circuit board; minimum
footprint.
7.1 Transient thermal impedance
Value Unit
0.65
K/W
60
K/W
50
K/W
03ac94
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
single pulse
P
d = ^tp
T
tp
t
T
10-3
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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