PSMN008-75P Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Rev. 01 — 18 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D²-PAK).
2. Features
s Fast switching
s Low on-state resistance
s Avalanche ruggedness rated.
3. Applications
s DC to DC converters
s Uninterruptable power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1
gate (g)
mb
2
drain (d)
[1]
mb
3
source (s)
mb
connected to
drain (d)
123
MBK106
SOT78
2
1
3 MBK116
SOT404 (D^2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.