PSMN008-75P Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
120
03aa11
Pder ¹⁰⁰
(%)
80
60
40
20
0
0 25 50
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
75 100 125 150 175
Tamb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider ₁₀₀
(%)
80
03ad10
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb _(oC)
V_GS ≥ 10 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103 _{RDSon = VDS/ ID}
ID
(A)
102
10
P
1
10-1
1
D.C.
δ
=
tp
T
tp
t
T
10
03ac65
tp = 100 µs
1 ms
10 ms
100 ms
102
103
VDS (V)
103
IAS
(A)
102
03ac93
25 ^oC
10
Tj prior to avalance = 150 ^oC
1
10-2
10-1
1 _{tp (ms)} 10
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Unclamped inductive load; V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C and 150 °C.
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
3 of 14