PSMN008-75P Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
03aa32
5
4.5
VGS(th)
(V) ⁴
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) _10-2
03aa35
10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C; V_DS = 5 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
100
gfs ₉₀
(S)
80
VDS > ID X RDSon
03ac71
Tj = 25 ^oC
70
60
50
175 ^oC
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
104
Ciss, Coss,
Crss (pF)
03ac68
Ciss
103
Coss
Crss
102 _10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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