PHX18NQ11 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
12
VGS = 0 V
IS
(A)
8
03am66
10
VGS
(V)
8
ID = 3 A
Tj = 25 °C
20 V
6
03am68
VDD = 80 V
150 °C
Tj = 25 °C
4
4
2
0
0
0.3
0.6
0.9 _{VSD (V)} 1.2
0
0
5
10
15
20
25
QG (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 3 A; V_DD = 20 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
7. Isolation characteristics
Table 6: Isolation characteristics
Symbol Parameter
V_(isol)RMS RMS isolation voltage from all three
terminals to external heatsink
C_(d-h)
Capacitance from drain to external
heatsink
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust-free.
Min. Typ. Max. Unit
-
-
2500 V
-
10 -
pF
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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