PHX18NQ11 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHX18NQ11T
TO-220F
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220AB ‘full pack’
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
T_h = 25 °C; V_GS = 10 V; Figure 2 and 3
T_h = 100 °C; V_GS = 10 V Figure 2
T_h = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_h = 25 °C; Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_h = 25 °C
I_SM
peak source (diode forward) current T_h = 25 °C; pulsed; t_p ≤ 10 µs
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 7.5 A;
t_p = 0.09 ms; V_DD ≤ 15 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C
[1] External heatsink connected to mounting base.
Min
-
-
-
[1] _-
[1] _-
[1] _-
[1] _-
−55
−55
Max Unit
110
V
110
V
±20
V
12.5 A
7.9
A
50.2 A
31.2 W
+150 °C
+150 °C
[1] _-
[1] _-
12.5 A
50.2 A
-
56
mJ
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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